Papers in the following areas are requested:
CIRCUIT AND DEVICE INTERACTION (CDI): Papers are solicited in the areas of platform technology and circuit-device interactions. Topics include CMOS platform technology, device and circuit scaling issues, technology-circuit co-optimization, power-performance-area analysis, impact of future device structures on circuit design, circuit and architecture implication of interconnects, layout effects and manufacturability issues such as DFM and process control. Submission of papers covering device and design interactions in issues such as design techniques to manage process variability, power constraints, and design complexity in memory, logic, RF/analog, and mixed-signal circuits is encouraged.
CHARACTERIZATION, RELIABILITY and YIELD (CRY): Papers are solicited in all areas of characterization, yield and reliability, both front-end and back-end of the process. Topics include but are not limited to hot carriers, gate dielectric wearout and breakdown, process charging damage, latch-up, ESD, soft errors, noise and mismatch behavior, bias temperature instabilities, and reliability of high-k and low-k materials, circuits, and packaging. Other topics include interconnect reliability, electromigration, the impact of back-end processing on devices, chip packaging interaction, manufacturing technologies for reliability, physics of failure analysis, as well as reliability issues for memory, logic, and 3D technologies and novel characterization techniques.
DISPLAY and IMAGING SYSTEMS (DIS): Papers are solicited on devices, structures, and integration for displays, imaging, and detectors. A subset of key topics in the displays and imaging area includes CMOS imagers, high-speed imagers, optoelectronic devices, CCD's, TFT's, organic, amorphous, and polycrystalline devices, optoelectronic devices, as well as emissive and reflective displays. Submission of papers addressing fundamental performance differences between CMOS and CCD imagers, organic and inorganic displays, and covering new technology trends in imagers and displays are encouraged. Other relevant subjects include DIS design, fabrication, reliability, theory, and modeling.
MEMORY TECHNOLOGY (MT): Papers are solicited covering all memory related technology topics, from novel memory cell concepts and integration schemes to fully integrated memories and manufacturing issues. Areas of interest include processes, reliability and modeling for volatile, nonvolatile, advanced memories, and novel memory cells including but not limited to ReRAM, STT-MRAM, PCRAM, Cross-point, Cross –point selectors, Organic memory and NEMS-based devices. Other topics of interest are memory array optimization, 3D memory architectures, novel reading/program/erase schemes and solid state drive (SSD) applications.
MODELING and SIMULATION (MS): Papers are solicited in the areas of analytical, numerical, and statistical approaches to modeling electronic, optical and multiphysical devices, their isolation and interconnection. Topics include physical and compact models for devices and interconnects, modeling of fabrication processes and equipment, material modeling, simulation algorithms, process characterization, parameter extraction, early compact models for advanced technologies, performance evaluation, design for manufacturing, reliability and technology benchmarking methodology. Other topics of interest include the modeling of interactions between process, device, and circuit technology. Submissions should advance the art of modeling and simulation or apply existing techniques to gain new insights into devices.
NANO DEVICE TECHNOLOGY (NDT): Papers are solicited on novel solid state, nanoelectronic and silicon based devices. Examples of nanoelectronic devices include nanotubes, nanowires, and quantum dots; spintronic, photonic, plasmonic and other non charge based devices; nanodevices for storage; molecular devices; tunnel FETs; and NEMS-based logic devices. Subsets of key topics in silicon based devices include CMOS device physics, CMOS scaling issues, novel MOS structures, as well as devices for high performance, low power, analog and RF applications. Other topics of interest are non-planar devices, devices based on SOI, and devices with high-mobility channels such as strained silicon, germanium, SiGe, graphene and other 2D materials.
POWER AND COMPOUND SEMICONDUCTOR DEVICES (PC): Papers are solicited in the areas of compound semiconductors (GaAs, InP, GaN, SiC, Antimonides and their related alloys, etc. ) with electronic and optoelectronic device applications. Papers are also solicited on discrete and integrated power devices using Si, diamond, and compound semiconductors. Topics include III-V FETs, tunnel FETs, HBTs, superjunction devices, IGBTs, vacuum devices, LEDs, lasers, external modulators, RF, microwave and millimeter-wave devices, and SAW devices. Also of special interest are ballistic and quantum effects, optoelectronic integrated circuits, optical interconnects, photovoltaics, photonic bandgap structures and crystals, and active and passive electron devices for analog applications.
PROCESS and MANUFACTURING TECHNOLOGY (PMT): Papers are requested on front-end, back-end, heterogeneous technology integration and packaging process modules for fabrication of logic, memory, and 3D integrated circuits on silicon and non-silicon technologies as well as advanced semiconductor manufacturing topics. Topics related to front-end processing include substrate technologies, new transistor materials and integration of alternative high mobility channel materials, lithography, etching, self-assembly techniques, isolation technologies, dielectric materials and metal electrodes for transistor gate stacks and MIM capacitors, shallow junctions, and silicides. Topics related to back-end processing include conductor systems, low dielectric constant materials, contact, via processes, barrier materials, planarization, integration considerations for multilevel interconnects, photonics-electronics integration on CMOS and advanced packaging. Advanced semiconductor manufacturing topics includes novel/emerging process technology, processes and tools designed to reduce variance, defect reduction in heterogeneous material systems, novel techniques around process understanding and stability as well as process control techniques for Si CMOS, wide band-gap semiconductors and MEMS.
SENSORS, MEMS, and BioMEMS (SMB): Papers are solicited in the area of sensors, micro electromechanical systems (MEMS) and BioMEMS. A subset of key topics in sensors area includes TFT-based sensors, and sensors for chemical, molecular and biological detection including integrated biomedical sensing. Topics of interest in the MEMS and BioMEMS area include resonators and resonant sensors, RF MEMS, integrated inertial measurement units, integrated sensors and actuators, micro-optical devices, micro-fluidic, and bio-electronic devices built from biological structures or enabled by biological structure, micro power generators, energy harvesting devices, and photovoltaic, optofluidic devices, and organic-inorganic hybrid-devices, with particular emphasis on new device concepts and integrated implementations. Submission in the area of BioMEMS and their comparison with other bio-sensors, such as TFT-based sensors, is encouraged.
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