Papers in the following areas are requested:
CIRCUIT AND DEVICE INTERACTION (CDI): Papers are solicited in the areas of CMOS platform technology and circuit-device interactions. Topics include digital, analog and RF technology, device and circuit scaling issues, technology-circuit co-optimization, power-performance-area analysis, impact of future device structures on circuit design, circuit and architecture implication of interconnects, and manufacturability issues such as DFM and process control. Submission of papers covering device and design interactions in memory, logic, analog, and mixed-signal circuit issues such as technology variability, power constraints, physical layout effects and design complexity in memory, logic, analog, and mixed-signal circuits is encouraged.
CHARACTERIZATION, RELIABILITY and YIELD (CRY): Papers are solicited in all areas of characterization, yield and reliability, both front-end and back-end of the process. Topics include but are not limited to hot carriers, high-k and low-k dielectric wear-out and breakdown, process charging damage, latch-up, ESD, soft errors, noise and mismatch behavior, variability/reliability interaction and time-dependent variability, bias temperature instabilities, and thermal modeling at the device, circuit, and packaging level. Other topics include interconnect reliability, electromigration, the impact of back-end processing on devices, chip- package interaction, physics of failure analysis, as well as reliability issues for memory, logic, and 3D technologies and novel characterization techniques.
DISPLAY and IMAGING SYSTEMS (DIS): Papers are solicited on devices, structures, and integration for displays, imaging systems, and detectors. A subset of key topics in the displays and imaging area includes CMOS imagers, high-speed imagers, optoelectronic devices, CCDs, TFTs, organic, amorphous, and polycrystalline devices, optoelectronic devices, as well as emissive and reflective displays. Submission of papers addressing fundamental performance differences between CMOS and CCD imagers, organic and inorganic displays, and covering new technology trends in imagers and displays are encouraged. Other relevant subjects include DIS design, fabrication, reliability, theory, and modeling.
MEMORY TECHNOLOGY (MT): Papers are solicited covering all memory related technology topics, from novel memory cell concepts and integration schemes to fully integrated memories and manufacturing issues. Areas of interest include processes, reliability and modeling for volatile and nonvolatile memories, as well as novel memory cells including but not limited to ReRAM, STT-MRAM, PCRAM, cross-point, cross–point selectors, organic memory and NEMS-based devices. Other topics of interest are memory array optimization, 3D memory architectures, novel read/program/erase schemes, solid state drive (SSD) applications, and non-volatile memory enabled emerging logic applications.
MODELING and SIMULATION (MS): Papers are solicited in the areas of analytical, numerical, and statistical approaches to modeling electronic, optical, and hybrid devices, and their isolation and interconnection. Topics include physical and compact models for devices and interconnects, modeling of fabrication processes and equipment, material modeling, process characterization, parameter extraction, early compact models for advanced technologies, performance evaluation, design for manufacturing, reliability, variability, and technology benchmarking methodologies. Other topics of interest include the modeling of interactions between process, device, and circuit technology. Submissions should advance the art of modeling and simulation or apply existing techniques to gain new insights into devices.
NANO DEVICE TECHNOLOGY (NDT): Papers are solicited on novel solid state and nanoelectronic devices and concepts. This includes devices based on novel transport mechanisms such as tunnel FETs; molecular devices, and emerging concepts for devices based on topological insulators, phase transitions and non-von Neumann devices. Non-charge based logic, magnetic logic, spintronics, silicon photonics, plasmonics are also of interest. Furthermore, nanoelectronic devices based on low-dimensional systems are encouraged, including 2D materials, nanowires, nanotubes and quantum dots. Subsets of key topics include electron device physics, CMOS scaling issues, novel transistor structures, as well as devices with high-mobility channels such as strained silicon, germanium, SiGe, and GeSn.
POWER AND COMPOUND SEMICONDUCTOR DEVICES (PC): Papers are solicited in the areas of compound semiconductors (GaAs, InP, GaN, SiC, Antimonides and their related alloys, etc. ) for electronic and optoelectronic device applications. Papers are also solicited on discrete and integrated power devices and modules using Si, diamond, and compound semiconductors. Topics include III-V FETs, tunnel FETs, HBTs, superjunction devices, IGBTs, vacuum devices, LEDs, lasers, external modulators, RF, microwave and millimeter-wave devices, and SAW/BAW devices. Also of interest are ballistic and quantum effect devices, optoelectronic integrated circuits, optical interconnects, photovoltaics, photonic bandgap structures and crystals, and active and passive electron devices for analog applications.
PROCESS and MANUFACTURING TECHNOLOGY (PMT): Papers are requested on front-end, back-end, heterogeneous technology integration and packaging process modules for fabrication of logic, memory, and 3D integrated circuits on silicon and non-silicon technologies as well as advanced semiconductor manufacturing topics. Topics related to front-end processing include substrate technologies, new transistor materials and integration of alternative high mobility channel materials, lithography, etching, self-assembly techniques, isolation technologies, dielectric materials and metal electrodes for transistor gate stacks and MIM capacitors, shallow junctions, and silicides. Topics related to back-end processing include conductor systems, low dielectric constant materials, contact, via processes, barrier materials, planarization, integration considerations for multilevel interconnects, photonics-electronics integration on CMOS and advanced packaging. Advanced semiconductor manufacturing topics includes novel/emerging process technology, processes and tools designed to reduce variance, defect reduction in heterogeneous material systems, novel techniques around process understanding and stability as well as process control techniques for advanced CMOS, wide band-gap semiconductors and MEMS.
SENSORS, MEMS, and BioMEMS (SMB): Papers are solicited in the area of sensors, sensor networks, micro electromechanical systems (MEMS), BioMEMS as well as NEMS-based logic devices. The sensors area includes, but is not limited to, ? TFT-based sensors, and sensors for chemical, molecular and biological detection including integrated biomedical sensing. Topics of interest in the MEMS and BioMEMS area include resonators and resonant sensors, RF MEMS, integrated inertial measurement units, integrated sensors and actuators, micro-optical devices, micro-fluidic, and bio-electronic devices inspired or enabled by biomimetic structures, micro power generators, energy harvesting devices and photovoltaics, optofluidic devices, and organic-inorganic hybrid-devices, with particular emphasis on new device concepts, integrated implementations and complete sensor systems and networks.
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