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Committees

 
 

2015 COMMITTEES

Executive Committee
Circuit and Device Interaction Committee
Characterization, Reliability and Yield Committee
Display and Imaging Systems
Memory Technology Committee
Modeling and Simulation Committee
Nano Device Technology Committee
Process and Manufacturing Technology Committee
Power and Compound Semiconductor Devices Committee
Sensors, MEMs, and BioMEMS Committee

EXECUTIVE COMMITTEE

General Chair
John Suehle
NIST
Gaithersburg, MD

Technical Program Chair
Patrick Fay
University of Notre Dame
Notre Dame, IN

Technical Program Vice Chair
Stefan De Gendt
imec
Leuven, Belgium

Publications Chair
Suman Datta
Penn State University
University Park, PA

Short Course Chair
Satoru Yamada
Samsung Electronics Co., Ltd.
Gyeonggi-Do, Korea

Short Course Vice Chair
Michael Wu
Taiwan Semiconductor Manufacturing Company
Hsinchu, Taiwan

Tutorial Chair
Ken Rim
Qualcomm
San Diego, CA

Focus Session Chair
Barbara De Salvo
CEA-LETI
Grenoble, France

Publicity Chair
Mariko Takayanagi
Toshiba
Tokyo, Japan

Publicity Vice Chair
Martin Giles
Intel
Hillsboro, OR

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Asian Arrangements Co-Chair
Masakazu Kanechika
Toyota
Aichi, Japan

Asian Arrangements Co-Chair
Tian-Ling Ren
Tsing-hua University
Beijing, China

European Arrangements Co-Chair
Tibor Grasser
TU Wien
Vienna, Austria

European Arrangements Co-Chair
Merlyne de Souza
University of Sheffield
Sheffield, UK

Conference Planners
Phyllis Mahoney
Widerkehr and Associates
Montgomery Village, MD

Polly Mahoney
Widerkehr and Associates
Montgomery Village, MD

CIRCUIT AND DEVICE INTERACTION COMMITTEE

Shyh-Horng Yang, Chair
TSMC
Hsinchu, Taiwan

Meng-Fan (Marvin) Chang
National Tsinghua University
Hsinchu, Taiwain

Shashank Ekbote
Qualcomm
San Diego, CA

Jan Hoentschel
GLOBALFOUNDRIES
Dresden, Germany

John Hu
Nvidia
Santa Clara, CA

Ru Huang
Peking University
Beijing, China

Yves Laplanche
ARM
Grenoble, France

Koji Nii
Renesas
Tokyo, Japan

Shigenobu Maeda
Samsung
Gyeonggi-do, Korea

Curtis Tsai
Intel
Hillsboro, OR

Maarten Vertregt
NXP
Eindhoven, The Netherlands

Robert Wu
Broadcom

Susan Wu
Xilinx
San Jose, CA

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CHARACTERIZATION, RELIABILITY, AND YIELD COMMITTEE

Ben Kaczer, Chair
imec
Leuven, Belgium

Su Jin Ahn
Samsung Electronics
Gyeonggi-do, Korea

Alain Bravaix
ISEN Toulon
Toulon, France

Mikael Casse
CEA-Leti
Grenoble, France

Tzu-Hsuan Hsu
Macronix
Hsinchu, Taiwan

Jungwoo Joh
Texas Instruments
Dallas, TX

Patrick Justison
GLOBALFOUNDRIES
Clifton Park, NY

Ziyuan Liu
The University of Tokyo
Kanagawa, Japan

Souvik Mahapatra
IIT Bombay
Mumbai, India

Steven Ramey
Intel
Hillsboro, OR

Guido Sasse
NXP
Nijmegen, The Netherlands

Deora Shweta
SEMATECH
Cohoes, NY

James Stathis
IBM Research
Yorktown Heights, NY

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DISPLAY and IMAGING SYSTEMS

David James Gundlach, Chair
NIST
Gaithersburg, MD

Seth Banks
UT Austin
Austin, TX

Ryoichi Ishihara
TU Delft
Delft, The Netherlands

Rihito Kuroda
Tohoku University
Miyagi, Japan

John Kymissis
Columbia University
New York, NY

Assaf Lahav
Tower Semiconductor
Migdal Haemek, Israel

Jack Luo
Zhejiang University
Hangzhou, China

Tetsu Morooka
Toshiba Corporation
Kawasaki, Japan

Tina Ng
Parc Research
Palo Alto, CA

Francois Roy
STMicroelectronics
Crolles, France

Soren Steudel
imec
Leuven, Belgium

Taku Umebayashi
Sony
Kanagawa, Japan

Ching-Chun Wang
TSMC
Tainan City, Taiwan

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MEMORY TECHNOLOGY COMMITTEE

Yoosang Hwang,Chair
Samsung
Gyeonggi-do, Korea

Ludovic Goux
imec
Leuven, Belgium

Anquan Jiang
Fudan University
Shanghai, China

Hiroki Koike
Tohoku University
Miyagi, Japan

Tao-Cheng Lu
Macronix International Co., LTD.
Hsinchu, Taiwan

Jea-Gun Park
Hanyang University
Seoul, Korea

Luca Perniola
CEA-LETI
Grenoble, France

Guiseppina Puzzili
Micron
Boise, ID

Abu Sebastian
IBM-Zurich
Rushlikon, Switzerland

Pawan Singh
Spansion
Sunnyvale, CA

Joseph (Zhong) Wang
Qualcomm
San Diego, CA

Joshua Yang
University of Massachusetts
Amherst, MA

Paola Zuliani
STMicroelectronics
Agrate Brianza, Italy


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MODELING AND SIMULATION COMMITTEE

Luca Larcher, Chair
University of Modena
Reggio Emilia, Italy

Suman Banerjee
Texas Instruments
Dallas, TX

Katsumi Eikyu
Renesas Electronics Corp.
Hyogo, Japan

Debdeep Jena
Cornell University
Ithaca, NY

Roza Kotlyar
Intel
Hillsboro, OR

Gengchiau Liang
National University Singapore
Singapore

Roza Kotlyar
Intel

Haitao Liu
Micron Technology
Boise, ID

Blanka Magyari-Kope
Stanford University
Stanford, CA

Susanna Reggiani
Bologna University
Bologna, Italy

Denis Rideau
STMicroelectronics
Crolles, France

John Robertson
Cambridge University
Cambridge, UK

Shigeyaso Uno
Ritsumeikan University
Shiga, Japan

Chung-Cheng Wu
TSMC
Hsinchu, Taiwan

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NANO DEVICE TECHNOLOGY COMMITTEE

Kirsten Moselund, Chair
IBM Zurich
Ruschlikon, Switzerland

Joerg Appenzeller
Purdue University
W. Lafayette, IN

David Esseni
University of Udine
Udine, Italy

Aaron D. Franklin
Duke University
Durham, NC

Zoran Krivokapic
GLOBALFOUNDRIES
Santa Clara, CA

Max Lemme
Siegen Univ.
Siegen, Germany

Chen-Hsin Lien
National Tsing Hua Univ.
Hsinchu, Taiwan

Junhee Lim
Samsung
Gyeonggi-do, Korea

Wie Lu
University of Michigan
Ann Arbor, MI

Matthias Passlack
TSMC
Leuven, Belgium

Andreas Schenk
ETHZ
Zurich, Switzerland

Shinichi Takagi
Univ. of Tokyo
Tokyo, Japan

Katsuhiro Tomioka
Hokkaido University
Hokkaido, Japan

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PROCESS and MANUFACTURING TECHNOLOGY COMMITTEE

Dina Triyoso, Chair
Globalfoundries
Malta, NY

Salih Muhsin Celik
Globalfoundries
Malta, NY

Chorng-Ping Chang
Applied Materials
Santa Clara, CA

Masao Inoue
Renesas Electronics Corporation
Ibaraki, Japan

Subhash Joshi
Intel Corporation
Hillsboro, OR

Ilgweon Kim
Samsung Electronic Co., Ltd.
Hwaseong-si, Korea

Takahiro Kouno
Socionext Inc.
Kanagawa, Japan

Jong-Ho Lee
Seoul National Univ.
Seoul, Korea

Romy Liske
Fraunhofer IPMS-CNT
Dresden, Germany

Mariam Sadaka
SOITEC
Austin, TX

Seiji Samukawa
Tohoku University
Sendai, Japan

Anabela Veloso
IMEC
Leuven, Belgium

Maud Vinet
CEA/Leti
Grenoble, France


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POWER AND COMPOUND SEMICONDUCTOR DEVICES

Gilbert Dewey, Chair
Intel Corporation
Hillsboro, OR

Kevin Chen
Hong Kong Univ. of Science & Technology
Hong Kong

Lukas Czornomaz
IBM
Ruschlikon, Switzerland

Alex Kalnitsky
TSMC
Hsinchu, Taiwan

Matteo Meneghini
Univ. of Padova
Padova, Italy

Kazuhiro Mochizuki
Hitachi
Ibaraki, Japan

Miura Naruhisa
Mitsubishi Electric
Hyogo, Japan

Serge Oktyabrsky
SUNY CNSE
Albany, NY

Clemens Ostermaier
Infineon Technologies AG
Villach, Austria

Mark Rodwell
UC Santa Barbara
Santa Barbara, CA

David Sheridan
RFMD
Greensboro, NC

Michael Uren
Univ. of Bristol
Bristol, UK

Marleen Vanhove
IMEC
Leuvenn, Belgium


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SENSORS, MEMS, and BioMEMS

Yuji Miyahara, Chair
Tokyo Medical and Dental University
Tokyo, Japan

Mirjana Banjevic
Sensirion AG
Zurich, Switzerland

Nuria Barniol
Universite Autonoma de Barcelona
Bellaterra, Spain

Carlotta Guiducci
EPFL
Lausanna, Switzerland

Tamio Ikehashi
Toshiba
Kawasaki, Japan

Severine Le Gac
University of Twente
Enschede, The Netherlands

Theresa S. Mayer
The Pennsylvania State University
University Park, PA

Dimitrios Peroulis
Purdue University
West Lafayette, IN

Debbie Senesky
Stanford Univ.
Stanford, CA

Naigang Wang
IBM T.J. Watson Research Center
Yorktown Heights, NY

Jianbin Xu
The Chinese University of Hong Kong
Hong Kong

Itaru Yanagi
Hitachi, Ltd.
Tokyo, Japan

Maryam Ziaie Moayed
Maxim Integrated
San Francisco, CA


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