TUTORIALS Saturday, December 7, 2:45 p.m. - 6:00 p.m.

SHORT COURSES Sunday, December 8, 9:00 a.m. - 5:30 p.m.

EDS Graduates of the Last Decade (GOLD) Information to come.


MEMBERSHIP PROMOTION FOR NON-IEEE MEMBERS: If you register and pay for the conference as a non-IEEE member, you will receive a Credit Voucher in your registration packet, worth US$25.00 towards one year of IEEE membership and Free EDS membership (total value US$43.00). This offer is also valid for members of other scientific / technical societies and non-member students. Credit Vouchers are only valid at the conference and must be redeemed at the EDS Membership Desk, located in the conference registration area.

MEMBERSHIP PROMOTION FOR CURRENT IEEE MEMBERS: Your IEDM conference registration includes membership in the IEEE Electron Devices Society (EDS). As an EDS member you will receive the following basic membership benefits:

  • Members-only content such as webinars with engineering luminaries like Chenming Hu, leader of the of the UC Berkeley team that developed the FinFET 3D Transistor
  • Free Online Access to:
    • IEEE Journal of Photovoltaics
    • IEEE Transactions on Electron Devices (1954 to current)
    • IEEE Electron Device Letters (1980 to current)
    • IEEE International Electron Devices Meeting (IEDM)
    • Technical Digests (1955 to current)
    • IEEE/OSA Journal of Lightwave Technology
  • Discounted Open Access Author Fees in the new Journal of the Electron Devices Society (coming in 2013)
  • Fully Hyperlinked TOC’s for Flagship EDS Publications Delivered to your Desktop
  • EDS Newsletter
  • QuestEDS – EDS’s Online Question and Answer Service
  • Free Copy-Editing Service of manuscripts submitted to Transactions on Electron Devices or Electron Devices Letters
  • Exclusive EDS Online Member Roster
  • Network with EDS’s more than 10,000 members

PLENARY SESSION Monday, December 9, 9:00 a.m. - 12:00 p.m.

PLENARY SESSION AWARD PRESENTATIONS

2012 Roger A. Haken Best Student Paper Award

To: H. Wang of Massachusetts Institute of Technology for the paper entitled, "Large-Scale 2D Electronics Based on Single-Layer MoS2 Grown by Chemical Vapor Deposition".

Copyright@2012 IEEE. Reprinted from 2012 International Electron Devices Meeting Technical Digest. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to the pubs-permission@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

RECEPTION Monday, December 9, 6:30 p.m. - 8:00 p.m.
International Ballroom Center

IEDM LUNCHEON Tuesday, December 10
12:20 p.m. - 2:00 p.m.
International Ballroom West

Luncheon Presentation: TBA

TWO PANEL SESSIONS Tuesday, December 10
8:00 p.m. - 10:00 p.m.
International Ballroom Center
International Ballroom East

Entrepreneurs Lunch at IEDM Speaker: TBA
Wednesday, December 11
12:30 pm - 1:30 pm.