2005 IEDM: Schedule & Highlights




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Conference Highlights

SHORT COURSES

Sunday, December 4, 9:00 a.m. - 5:30 p.m.
International Ballroom East
international Ballroom Center

PLENARY SESSION

Monday, December 5, 9:00 a.m. - 12:00 p.m.
International Ballroom Center

PLENARY SESSION AWARD PRESENTATIONS

2004 Roger A. Haken
Best Student Paper Award:

To: Masumi Saitoh, University of Tokyo

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2005 EDS Chapter of the Year Award

To: To Be Announced
"To an EDS chapter, based on the quantity and quality of the activities and programs implemented by the chapter."

2005 EDS Graduate Student Fellowship Award

To: Christopher Morris, University of Washington; Elena Smotrova, National Academy of Sciences of Ukraine; Sun-Jung Kim, The National University of Singapore; and Tony Aik Seng Low, The National University of Singapore "

"To promote, recognize, and support graduate level study and research within the Electron Devices Society's field of interest."

2005 George E. Smith Award

To: Zhi-Yuan Charles Cheng, Arthur J. Pitera, Minjoo Larry Lee, Jongwan Jung, Judy L. Hoyt, Dimitri A. Antoniadis, and Eugene A. Fitzgerald

For the paper entitled: "Fully Depleted Strained-SOI n- and p-MOSFETs on Bonded SGOI Substrates and Study of the SiGe/BOX Interface"

2005 Paul Rappaport Award

To: Franco Stellari, Peilin Song, James C. Tsang, Moyra K. McManus and Mark B. Ketchen

For the paper entitled: "Testing and Diagnostics of CMOS Circuits Using Light Emission from Off-State Leakage Current"

2005 IEEE/EDS Fellows
(Only includes those who requested to be recognized at the IEDM)

Supriyo Bandyopadhyay, Virginia Commonwealth University, Richmond, VA, USA "For contributions to device applications of nanostructures."

Duane S. Boning, Massachusetts Institute of Technology, Cambridge, MA, USA "For contributions to modeling and control in semiconductor manufacturing."

Jeff D. Bude, Agere Systems, New Providence, NJ, USA "For contributions to the deep submicron MOSFETs."

Robert S. Chau, Intel Corporation, Beaverton, OR, USA "For contributions to gate dielectric and transistor technology for microprocessors."

Guido V. Groeseneken, IMEC, Leuven, Belgium "For his contributions to the physical understanding and the modeling of reliability of metal oxide semiconductor field effect transistors."

James Albert Hutchby, Semiconductor Research Corp., Research Triangle Park, NC, USA "For leadership in the development of high-efficiency solar cells and heterojunction bipolar transistors."

Masaaki Kuzuhara, University of Fukui, Japan "For contributions to group III-V microwave devices."

John Melngailis, University of Maryland, College Park, MD, USA "For contributions to focused ion beam applications."

Mehrdad J. Moslehi, Semizone Inc., Palo Alto, CA, USA "For contributions to single wafer processing technologies."

Laurence W. Nagel, Omega Enterprises, Randolph, NJ, USA "For contributions to the field of integrated circuit simulation."

Hidehito Obayashi, Hitachi High-Technologies Corporation, Hitachinaka, Ibaraki, Japan "For contributions to critical dimension scanning electron microscopy."

Yutaka Ohmori, Osaka University, Suita, Osaka, Japan "For contributions to the development of organic and semiconductor light emitting materials and devices."

Enrico Sangiorgi, University of Bologna, Cesna, FC, Italy "For contributions to the modeling and characterization of hot carriers and non stationary transport effects in small silicon devices."

Tangali S. Sudarshan, University of South Carolina, Columbia, SC, USA "For contributions to surface flashover of dielectric and semiconductor materials."

Juzer M. Vasi, Indian Institute of Technology (IIT), Bombay, Mumbai Maharashtra, India "For leadership in microelectronics education."

Sophie V. Verdonckt-Vandebroek, Xerox Corporation, Webster, NY, USA "For leadership in developing document systems."

Donald Coolidge Wunsch, University of Missouri - Rolla, Rolla, MO, USA "For contributions to hardware implementations of reinforcement and unsupervised learning."

2005 EDS Distinguished Service Award

To: Cary Y. Yang
"To recognize and honor outstanding service to the Electron Devices Society."

2005 J.J. Ebers Award

To: To Be Announced
"To honor a single or a series of contributions of recognized scientific, economic, or social significance in the broad field of electron devices"

RECEPTION

Monday, December 5, 6:00 p.m. - 7:30 p.m.
International Ballroom

IEDM LUNCHEON

Tuesday, December 6
12:20 p.m. - 2:00 p.m.
International Ballroom West

2005 Cledo Brunetti Award

To: William Oldham, University of California, Berkeley

"For pioneering contributions to lithographic engineering and to high-density isolation technology"

2005 IEEE Andrew S. Grove Award

To: Tso-Ping Ma, Yale University

"For contributions to the development and understanding of CMOS gate dielectrics"

2005 IEEE Daniel E. Noble Award

To: David L. Harame, IBM

"For the development of manufacturable Silicon Germanuim, HBT Bipolar and BiCMOS technologies"

LUNCHEON PRESENTATION

"Bits and Atoms," Prof. Neil Gershenfeld, Massachusetts Institute of Technology

PANEL SESSIONS

Tuesday, December 6
8:00 p.m. - 10:00 p.m.
International Ballroom East
International Ballroom Center