Plenary SessionMonday, December 10, 9:00 a.m. Welcome and Awards
Invited Papers 1.1 Automotive Electronics - Enabling the Future of Individual Mobility, Claus Schmidt, Robert Bosch GmbH Automotive electronics changed dramatically during the past 50 years due to increasing requirements by legislation, safety for passengers, emission and last but not least convenience and entertainment. Starting from a few simple and isolated functions in corresponding electronic devices, automotive electronics developed into a completely networked architecture of many microprocessors. This network apart from other functions takes care of the management of vehicle dynamics, assists drivers in order to avoid collisions and other accidents, decreases pollution of the environment and reduces fuel consumption of the vehicles. In order to handle the increasing complexity of these networks, specific domain oriented architectures of the electronics are necessary (some examples will be shown). Additionally the components of the electronics have to withstand high temperatures and strong vibrations and still provide a nearly zero-defect quality over the lifetime of a car. Specific mechatronic solutions for the electronic control units in vehicles (e.g. utilization of ceramics as substrates for the components) are used therefore. At the end all of these requirements from functionality, environment etc. strongly influence the design and technology for the semiconductors used in automotive electronics. Zero-defect quality, long-term reliability and supply, resistance to electric overstress, increasing functionality at decreasing cost are just a few examples of automotive specific requirements on semiconductors. Nevertheless automotive semiconductors showed a healthy increase of revenues during the past 10 years and will continue to keep this pace in the foreseeable future. 1.2 Roles of Quantum Nanostructures on the Evolution and Future Advances of Electronic and Photonic Devices, Hiroyuki Sakaki, Toyota Technological Institute In almost every branch of electronics, nanometer (nm) scale layered structures are routinely used as the core parts of key devices, such as Si MOS field-efffect transistors (FETs), heterostructure FETs, heterobipolar transistors, lasers, and LEDs. It is because electric conductivities and optical gains of semiconductors can be controlled very efficiently in such nanostructures simply by modulating the concentration of electrons and/or holes therein. Moreover, these layered nanostructures have enabled the birth and development of such quantum devices as resonant tunneling diodes (RTDs), quantum well infrared photodetectors (QWIPs) and quantum cascade lasers (QCLs) that exploit the discrete energy levels or associated subbands of quasi-two dimensional (2D) electrons in such films. Note that these devices have allowed us to generate and utilize electromagnetic waves from 10GHz to 100THz. We examine the current state of layered nanostructure devices to discuss problems to be tackled. The scaling or the lateral size reduction of FETs over the last several decades has led to amazing advances in FET-based electronics. As a result, 10nm-scale patterning technology, once regarded to be quite esoteric, has become the key technique for LSI and microwave electronics. In the mid-70's, long before the feature size of FETs reached the sub-100nm range, we started theoretical studies to control the in-plane motion of electrons quantum mechanically by using 10nm-scale box and wire structures. We intended to create new properties and functions of lower-dimensional electrons and to bring forth such new devices as quantum wire (QWR) FETs, quantum dot (QD) lasers and planar superlattice FETs. Sparked by these proposals, numerous other proposals have been made and various processing methods have been developed to fabricate QD- and QWR-based materials and devices and to demonstrate their features. We examine the present state and future prospects of such research activities in expanding the forefront of IT technology. Specifically, we discuss first recent advances in such transport devices, as QWR FETs, QD-based charge storage devices, and also QD-based single-electron transistors and disclose possible roles they may play in the next-generation electronics. We then examine also recent advances in QD-based photonic devices, such as QD lasers and amplifiers, QD-based single-photon emitters, and QD-based interband and intraband photodetectors. Finally, we discuss a couple of exploratory attempts to look for new applications of QD and QWR structures in such areas as bio-medical imaging, gas sensing, and quantum information processings. 1.3 Combining Digital Optical MEMS, CMOS, and Algorithms for Unique Display Solutions, Larry J. Hornbeck, Texas Instruments The worldwide high-definition, large screen TV and front projection display markets are growing rapidly, fueled by a diversity of new applications, the availability of high-definition content, the replacement of legacy CRT technology, and the expectations of the consumer regarding styling, price and functionality. Manufacturers are scrambling to meet the needs of this diverse market with an array of technologies that include flat panel displays and microdisplay systems based on MEMS (microelectromechanical systems branded as DLP technology), HTPS (high-temperature polysilicon) LCD, and LCOS (liquid-crystal on silicon). This paper focuses on the integration of large pixel arrays of digital optical MEMS with CMOS (complementary metal-oxidesemiconductor) circuitry, combined with digital algorithms to achieve diverse display solutions ranging from pocket projectors and high-definition televisions to large-venue projectors and 3-D digital cinema. Topics include pixel design, operation, drive waveform optimization and scaling strategies; benefits and tradeoffs of 1-chip vs. 3-chip optical architectures, and solid-state vs. lamp-based illumination; subjective image quality and the role of algorithms; factors affecting image stability and reliability; and monolithic integration and packaging challenges. |
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