Session 27: Power and Compound Semiconductor Devices - Next-Generation Power, Lighting and Logic

Wednesday, December 12, 9:00 a.m.
Continental Ballroom 9

Co-Chairs: Tsuyoshi Tanaka, Panasonic Corporation
Grace Xing, University of Notre Dame

9:05 a.m.
27.1  Heteroepitaxial Growth and Power Electronics Using AlGaN/GaN HEMT on Si (Invited), T. Egawa, Nagoya Institute of Technology

We have introduced technologies for increase in breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. A GaN/AlN strained super-lattice (SLS) buffer has been inserted between a nucleation layer and a thick GaN layer. This technology enables to increase in a total thickness of epitaxial layer, resulting in improvement of both vertical and horizontal breakdown. Deep investigation of geometrical relationship between the pit and the gate finger reveals that breakdown characteristics of the device not only on the pit but also near the pit are degraded. Finally, we fabricated a reasonably long gate-to-drain distance to further improve total breakdown characteristics. To combination of all these technologies, we have achieved very high breakdown voltage (1400 V) with a state-of-the-art FOM (= BV₂/R_on) of 2.6×10⁸ V²Ω^-1cm^2, for AlGaN/GaN HEMTs on Si.

9:30 a.m.
27.2  Self-Aligned-Gate GaN-HEMTs with Heavily-Doped n⁺-GaN Ohmic Contacts to 2DEG, K. Shinohara, D. Regan, A. Corrion, D. Brown, Y. Tang, C. Butler, J. Wong, G. Candia, A. Schmitz, H. Fung, S. Kim, M. Micovic, HRL Laboratories, LLC

Record device performance was obtained in deeply-scaled self-aligned-gate GaN-HEMTs with heavily-doped n+GaN S/D in direct contact with 2DEG near the gate. 20-nm-gate devices exhibited R_on = 0.23 Ω-mm, I_dmax > 4 A/mm, and a broad g_m of >1 S/mm over a wide range of I_ds from 0.5 to 3.5 A/mm. A record fmax exceeding 500 GHz was demonstrated for the first time.

9:55 a.m.
27.3  Extremely High Current Density Over 1000 A/cm² Operation in m-plane GaN Small Size LEDs with Low Efficiency Droop and Method for Controlling Radiation Pattern and Polarization, A. Inoue, R. Kato, A. Yamada, T. Yokogawa, Panasonic Corporation

We have demonstrated high-power and small-size m-plane GaN-LEDs with low efficiency droop operating on over 1000 A/cm². We have clarified the asymmetric radiation pattern is related to optical output from lateral c-plane surface. Finally, the control of radiation pattern and polarization was realized by striped texture on top m-plane surface.

10:20 a.m.
27.4  ARoom-Temperature Photonic Crystal Nanocavity Light Emitting Diodes Based on Ge Self-Assembled Quantum Dots, X. Xu, T. Mauizumi, Y. Shiraki, Tokyo City University

We demonstrate room-temperature current-injected LEDs based on Ge QDs in PhC nanocavities through lateral PIN diodes. Strong electroluminescence and sharp resonant peaks are observed when the injected current is larger than 50 μA. The output power is measured for the first time, and achieves 6 pW at 3 mA injection.

10:45 a.m.
27.5  Excellent Device Performance of 3D In_0.53Ga_0.47As Gate-Wrap-Around Field-Effect-Transistors with High-k Gate Dielectrics, F. Xue, A. Jiang, Y. Chen, Y. Wang, F. Zhou, Y. Chang, J. Lee, University of Texas, Austin

Excellent device performance of In_0.53Ga_0.47As Gate-Wrap-Around devices has been demonstrated by novel device design and fabrication process. Good combination of current drive and subthreshold characteristics has been achieved by W_fin=40 nm with SS=80mV/dec and DIBL=20mV/V, which are among the lowest value ever reported for III-V MOSFETs devices.

11:10 a.m.
27.6  20–80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec, J.J. Gu, X.W. Wang*, H. Wu, J. Shao, A.T. Neal, M.J. Manfra, R.G. Gordon*, P.D. Ye, Purdue University, *Harvard University

We have demonstrated the shortest L_ch=20nm InGaAs GAA nanowire MOSFETs with ALD Al₂O₃/LaAlO₃ gate stack. ION=850μA/μm at V_dd=0.8V, gm of 1.65mS/μm at V_ds=0.5V , lowest SS of 63mV/dec and DIBL of 7mV/V have been achieved. InGaAs GAA technology is a strong candidate for future high-speed low-power logic application.