Session 30: Solid State and Nanoelectronic Devices - Emerging Resistive RAM and New Function on Silicon

Wednesday, December 12, 9:00 a.m.
Jefferson Room

Co-Chairs: Sunae Seo, Samsung
Jacques Gautier, CEA-LETI

9:00 a.m.
Introduction

9:05 a.m.
30.1  Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3V, K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, and Y. Sugiyama, Fujitsu Laboratories

Ti-doped NiO ReRAM which is connected to the select transistor in series is investigated. Small reset current of less than 100uA and fast reset time of less than 5ns have been achieved, together with the stable pulse switching within 3V and excellent data retention at 150ºC.

9:30 a.m.
30.2  2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications, M.J. Lee, Y. Park, B.S. Kang, S.E. Ahn, C.B. Lee, K.H. Kim, W. Xianyu, G. Stefanovich, J.H. Lee, S.J. Chung, Y.H. Kim, C.S. Lee, J.B. Park, I.G. Baek* and I.K. Yoo, Samsung Advanced Institute of Technology, *Samsung Electronics, Co., Ltd.

We have successfully integrated a 2-stack 8x8 array 1D-1R(one diode-one resistor) structure with 0.5umx0.5um cells in order to demonstrate the feasibility of high density stacked RRAM. p-CuO_X/n-InZnO_X heterojunction oxide p-n diode was used for the first time as a switch element applicable to high density non-volatile memory. No limitation to the number of stacks has been observed from our results.

9:55 a.m.
30.3  Conductive-Filament Switching Analysis and Self-Accelerated Thermal Dissolution Model for Reset in NiO-Based RRAM, U. Russo, D. Ielmini, C. Cagli, A. Lacaita, S. Spiga*, C. Wiemer*, M. Perego*, M. Fanciulli*, Politecnico di Milano, *CNR-INFM

Resistive-switching memories based on conductive-filament in metal-oxides offer large scalability and low voltage operation. However, the reset operation requires quite large current and it is not fully understood. In this work we explain the observed sharp reset transition is by self-accelerated thermal model for dissolution of the filament. The model allows to consistently address retention and reset current reduction in NiO RRAMs.

10:20 a.m.
30.4  Fast Switching and Long Retention Fe-O ReRAM and its Switching Mechanism, S. Muraoka, K. Osano, Y. Kanzawa, S. Mitani, S. Fujii, K.Katayama, Y. Katoh, Z. Wei, T. Mikawa, K. Arita, Y. Kawashima, R. Azuma, K. Kawai, K. Shimakawa, A. Odagawa, T. Takagi, Matsushita Electric Industrial Co., Ltd.

A novel iron-oxide (Fe-O) ReRAM is proposed and its high-speed resistance switching of 10 ns is demonstrated. The switching mechanism is confirmed as Redox reaction between Fe₃O₄ and _y-Fe₂O₃. Based on this model, we have achieved long-retention characteristics by introducing Zn atom to suppress reduction process.

10:45 a.m.
30.5  A Novel Resistance Memory with High Scalability and Nanosecond Switching, K. Aratani, K. Ohba, T. Mizuguchi, S. Yasuda, T. Shiimoto, T. Tsushima, T. Sone, K. Endo, A. Kouchiyama, S. Sasaki, A. Maesaka, N. Yamada, and H. Narisawa, Sony Corporation

A dual-layered electrolytic resistance memory has been demonstrated for the first time. Complete nanosecond switching of all cells in the 4kbit array, satisfactory retention, scalability down to 20nm, endurance up to 1E7 cycles, and preliminary 4-level operation will be presented to qualify this memory for the next generation nonvolatile memory.

11:10 a.m.
30.6  Silicon Photonics Approach for Nanotechnology Era (Invited), K. Ohashi, K. Nishi, J. Fujikata, M. Nakada, T. Ishi, T. Shimizu, K. Nose, A. Gomyo, T. Ishi, J. Ushida, M. Mizuno, M. Kinoshita, N. Suzuki, D. Okamoto, H. Yukawa, T. Tsuchizawa*, T. Watanabe*, K. Yamada*, S. Itabasi*, J. Akedo**, MIRAI-Selete, NEC, *NTT, **AIST

A small electro optical modulator and a photodiode coupled with a waveguide are developed for onchip interconnects. SiOnSiO2 waveguides show low propogation loss and high transparenty at about 700 to 10000nm. Potential low power consumption less than 0.3mW of Si nanophotodiode and the high speed response of PLZT for modulator were confirmed

11:35 a.m.
30.7  Single-Electron Circuit for Stochastic Sata Processing Using nano-MOSFETs, K. Nishiguchi, A. Fujiwara, NTT Corporation A MOSFET-based circuit utilizing single electrons is demonstrated. The behavior of individual electrons randomly passing through a silicon-on-insulator MOSFET, which is monitored by an electrometer in real time, is used for random-number generation suitable for a data processing that stochastically extracts the optimum solution.