Session 7: Power and Compound Semiconductor Devices - Power Devices – Si, GaN, SiC, Diamond

Monday, December 10, 1:30 p.m.
Imperial Ballroom

Co-Chairs: Oliver Häberlen, Infineon Technologies Austria AG
Peter Moens, ON Semiconductor Belgium BVBA

1:30
Introduction

1:35 p.m.
7.1  The Role of Silicon, Silicon Carbide and Gallium Nitride in Power Electronics (Invited), M. Treu, Infineon Technologies Austria AG

2:00 p.m.
7.2  GaN Gate Injection Transistor with Integrated Si Schottky Barrier Diode for Highly Efficient DC-DC Converters, T. Morita, S. Ujita, H. Umeda, Y. Kinoshita, S. Tamura, Y. Anda, T. Ueda, T. Tanaka, Panasonic Corporation

GaN Gate Injection Transistor(GIT) with an integrated Si Schottky barrier diode(SBD) is presented. The reduction of the gate length and the integration of the SBD reduce the operating loss of low voltage DC-DC converters. The DC-DC converter using the integrated devices exhibits a high peak efficiency of 89% at 2MHz.

2:25 p.m.
7.3  Integrated Gate-Protected HEMTs and Mixed-Signal Functional Blocks for GaN Smart Power ICs, A. Kwan, X. Liu, K. Chen, Hong Kong University of Science and Technology

On a GaN smart power IC platform, we have demonstrated gate-protected high-voltage AlGaN/GaN E-mode HEMTs that can sustain large input-gate voltage swing (>20 V) with enhanced reliability and safety. A 2-level quantizer and an S/R flip-flop are also demonstrated to expand the design library of mixed-signal functional blocks toward fully integrated GaN power converters.

2:50 p.m.
7.4  Performance and Reliability Improvement in SiC Power MOSFETs by Implementing AlON High-k Gate Dielectrics, T. Hosoi, S. Azumo*, Y. Kashiwagi*, S. Hosaka*, R. Nakamura**, S. Mitani**, Y. Nakano**, H. Asahara**, T. Nakamura**, T. Kimoto***, T. Shimura, H. Watanabe, Osaka University, *Tokyo Electron Ltd., *ROHM Co. Ltd., ***Kyoto University

We have developed AlON high-k gate dielectric technology which can be easily implemented into both planar and vertical SiC-based MOSFETs. Based on electrical characterization and numerical simulation, thickness ratio of AlON layer to SiO₂ interlayer and nitrogen content in AlON film were carefully optimized to enhance device performance and reliability.

3:15 p.m.
7.5  Diamond Semiconductor JFETs by Selectively Grown n+-Diamond Side Gates for Next Generation Power Devices, T. Iwasaki, Y. Hoshino, K. Tsuzuki, H. Kato*, T. Makino*, M. Ogura*, D. Takeuchi*, T. Matsumoto*, H. Okushi*, S. Yamasaki*, M. Hatano, Tokyo Institute of Technology, *JST-CREST

Diamond semiconductor is an attractive material for next-generation power devices due to its high breakdown field. By selective n+-type diamond growth, diamond JFETs were fabricated and operated successfully for the first time. We demonstrate steep subthreshold slopes and low leakage current, maintained in 10¹⁴-10¹⁵ A ranges up to 423 K.

3:40 p.m.
7.6  A 10kV Vacuum Switch with Negative Electron Affinity of Diamond p-i-n Electron Emitter, Takeuchi, S. Koizumi*, T. Makino, H. Kato, M. Ogura, H. Okushi, H. Ohashi, S. Yamasaki, AIST, *NIMS

This paper presents experimental results of a negative electron affinity electron emitter using diamond p-i-n diodes which achieves a power gain of 2.8 at 10 kV operations during RT operations first time. This result proves a principle of vacuum switches over 100 kV with an efficiency beyond 99.9%.