Session 37: Displays, Sensors and MEMS — Thin Film Transistors for Displays and System on Panel

Wednesday, December 7, 1:30 p.m.
Georgetown Room

Co-Chairs: Kyuha Chung, Samsung Electronics
Akintunde Akinwande, Massachusetts Institute of Technology

1:30 p.m.
Introduction

1:35 p.m.
37.1  0.1_m Poly-Si Thin Film Transistors for System-on-Panel (SoP) Applications, B.-Y. Tsui*,^, C.-P. Lin*, C.-F. Huang*, Y.-H. Xiao*, *National Chiao Tung University, Taiwan, R.O.C., ^National Nano Device Laboratories, Taiwan, R.O.C.

Thin active layer, fully-silicided S/D, modified Schottky barrier, high dielectric constant (high-k) gate dielectric, and metal gate are integrated to realize high performance TFTs. Devices with 0.1um channel length were fabricated successful. Low threshold voltage, low subthreshold swing, high effective mobility, low S/D resistance, high on/off current ratio, and good control of threshold voltage are demonstrated.

2:00 p.m.
37.2  High Mobility N-Channel and P-Channel Nanocrystalline Silicon Thin Film Transistors, C.-H. Lee, A. Sazonov, A. Nathan, University of Waterloo, Waterloo, Canada

This paper describes nanocrystalline silicon (nc-Si:H) ambipolar thin-film transistors (TFTs) prepared using plasma-enhanced chemical vapor deposition at 260 oC. The n-channel TFTs show an electron mobility of 150 cm2/Vs and p-channel TFTs show a hole mobility of 26 cm2/Vs. The TFT presented here are promising for low-cost on-panel CMOS integration.

2:25 p.m.
37.3  High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by µ-Czochralski Process with Capping Layer, R. Vikas, R. Ishihara, Y. Hiroshima*, D. Abe*, S. Inoue*, T. Shimoda*, J.W. Metselaar, C. I. M. Beenakker, Delft University of Technology, Delft, The Netherlands, *Seiko-Epson Corporation, Nagano, Japan

To enlarge the grain size of 2D location-controlled Si grain by m-Czochralski process, the capping layer of SiO2 in excimer-laser crystallization of amorphous Si thin film has been employed. With a 50 nm thick SiO2 capping layer on a 100 nm thick amorphous Si film, the diameter of the location-controlled grain increased upto 7.5 mm. Single grain TFTs were fabricated with the SiO2 capping layer as a part of the gate oxide. Field effect mobility of electron of 510 cm2/Vs and field effect mobility of hole of 210 cm2/Vs were obtained.

2:50 p.m.
37.4  Low Temperature Single Grain Thin Film Transistor (LTSG-TFT) with SOI Performance Using CMP-Flattened Micro-Czochralski Process, H. Shimada, Y. Hiroshima, T. Shimoda, Seiko Epson Corporation, Nagano, Japan

We succeeded in fabricating low-temperature single-grain (LTSG-) TFT devices with excellent characteristics by using the CMP-flattened micro-Czochralski process for 3-D integrated circuits application. The LTSG-TFT devices demonstrated high drivability comparable to that of SOI-MOSFETs and an excellent gate delay time of 65psec was obtained despite fully low temperature processing.

3:15 p.m.
37.5  2-bit Poly-Si-TFT Nonvolatile Memory Using Hafnium Oxide, Hafnium Silicate and Zirconium Silicate, Y.-H. Lin, C.-H. Chien, T.-H. Chou, T.-S. Chao, C.-Y. Chang, T.-F. Lei, National Chiao-Tung University, Taiwan, R.O.C.

In this paper, we used three kinds of high-k materials, such as HfO2, Hf-silicate and Zr-silicate for trapping layer of poly-Si-TFT memories. We, for the first time, have demonstrated the low-temperature fabrication of SONOS-type memories with good characteristics in terms of memory window, retention time, endurance, disturbances and 2-bit operation.

3:40
37.6  Highly Efficient Current Scaling AMOLED Panel Employing a New Current Mirror Pixel Fabricated by Excimer Laser Annealed Poly-Si TFTs, J.-H. Lee, W.-J. Nam, M.-K. Han, Y.-M. Ha*, C.-H. Lee*, S.-K. Hong*, Seoul National University, Seoul, Korea, *LG Philips LCD Co. Ltd., Gyungbuk, Korea

We will report highly efficient current scaling AMOLED panel exhibiting uniform and no residual image, which employs a new current mirror pixel to increase a minimum data current for one gray and reduce a charging time. The fabrication and performance of 2.4 inch AMOLED display will be discussed.

4:05
37.7  Novel Solid-State Spatial Light Modulator on Integrated Circuits for High-Speed Applications with Electro-Optic Thin Film, Y. Fujimori, T. Fujii, T. Suzuki, H. Kimura, T. Fuchikami, T. Nakamura, H. Takasu, ROHM Co. Ltd., Kyoto, Japan

We will report highly efficient current scaling AMOLED panel exhibiting uniform and no residual image, which employs a new current mirror pixel to increase a minimum data current for one gray and reduce a charging time. The fabrication and performance of 2.4 inch AMOLED display will be discussed.